Organic light emitting diode display and method for manufacturing the same

ABSTRACT

An organic light emitting diode (OLED) display and a method for manufacturing the same are described. An exemplary embodiment provides an OLED display including: a substrate including a plurality of pixel areas; a light emitting unit including an organic light emitting diode and a plurality of first thin film transistors, the light emitting unit being formed in each of the plurality of pixel areas; and a sensor unit including a photosensor and a plurality of second thin film transistors, the sensor unit being formed in at least some of the plurality of pixel areas. Each of the plurality of first thin film transistors and the plurality of second thin film transistors includes an oxide semiconductor layer, and the photosensor includes an oxide photoelectric conversion layer that are made of a same material on a same layer as the oxide semiconductor layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of application Ser. No. 12/914,842filed Oct. 28, 2010, now issued as U.S. Pat. No. 8,933,868, whichclaimed the benefit of the filing date of Korean Patent Application No.10-2009-0108266 filed in the Korean Intellectual Property Office on Nov.10, 2009, the entire content of which is incorporated herein byreference.

BACKGROUND

1. Field

Aspects of embodiments of the present invention relate to an organiclight emitting diode (OLED) display.

2. Description of the Related Art

An OLED display is a self light emitting type display device thatincludes organic light emitting diodes for emitting light and displayingimages. Since the OLED display does not require a separate light source,unlike a liquid crystal display (LCD), it has relatively reducedthickness and weight. In addition, since the OLED display hascharacteristics such as low power consumption, high luminance, highreaction speed, etc., it has gained interest as a next-generationdisplay device for portable electronic devices.

A display device that can receive information through contacting ascreen with a finger or a stylus pen has been developed. The displaydevice having an information input function has been widely used forpersonal digital assistants (PDA), portable game machines, vehiclenavigation, automated teller machines (ATM), etc.

The display device having the information input function has beenmanufactured by a method that couples a separately manufactured touchpanel to a display panel or directly forms various sensors inside thedisplay panel, and the like.

However, when a touch panel is manufactured separately, the overallthickness of the display device is increased, and the touch panel coversthe display panel, thereby deteriorating the quality of images that aredisplayed on the display panel. On the other hand, when a sensor isformed directly inside the display panel, the structure becomescomplicated and complexity of the manufacturing process is increased,such that productivity is deteriorated.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the describedtechnology, and therefore it may contain information that does not formthe prior art that is already known to a person of ordinary skill in theart.

SUMMARY

Exemplary embodiments of the present invention provide an organic lightemitting diode (OLED) display with a relatively simplified structure andimproved performance while having an information display function and aninput function.

In addition, the exemplary embodiments provide a relatively simplifiedmanufacturing method of the above-mentioned organic light emitting diode(OLED) display.

An exemplary embodiment provides an OLED display including: a substrateincluding a plurality of pixel areas; a light emitting unit in each ofthe plurality of pixel areas, the fight emitting unit including anorganic light emitting diode and a plurality of first thin filmtransistors; and a sensor unit in each of at least some of the pluralityof pixel areas, the sensor unit including a photosensor and a pluralityof second thin film transistors. Each of the plurality of first thinfilm transistors and the plurality of second thin film transistorsincludes an oxide semiconductor layer, and the photosensor includes anoxide photoelectric conversion layer. The oxide semiconductor layer andthe oxide photoelectric conversion layer include a same material on asame layer.

The oxide semiconductor layer and the oxide photoelectric conversionlayer may include oxygen (O) and at least one element selected from thegroup consisting of gallium (Ga), indium (In), zinc (Zn), hafnium (Hf),and tin (Sn).

The substrate may include a transparent insulating material such thatlight emitted from the organic light emitting diode may be transmittedthrough the substrate.

The organic light emitting diode (OLED) display may further include agate line, a data line, and a light emitting power line, each beingelectrically coupled to the plurality of first thin film transistors.Each of the plurality of first thin film transistors may include a gateelectrode below the oxide semiconductor layer. The gate electrode may bemade of a same material on a same layer as the gate line, the data line,and the light emitting power line.

The gate line may extend in a direction that crosses the data line andthe light emitting power line. The gate line or both the data line andthe light emitting power line may have disconnection units at crossingsbetween the gate line and the data line and the light emitting powerline. The disconnection units may be coupled to each other through aconnection member formed on different layers.

The OLED display may further include a reset line, an output line, and asensor power line that are electrically coupled to the plurality ofsecond thin film transistors. Each of the plurality of second thin filmtransistors may include a gate electrode below the oxide semiconductorlayer. The gate electrode may include a same material on a same layer asthe reset line, the output line, and the sensor power line.

The gate electrode of each of the first thin film transistors and thegate electrode of each of the second thin film transistors may include asame material on a same layer.

The OLED display may further include a light emitting driver coupled tothe light emitting unit and a sensor driver coupled to the sensor unit.

The OLED display may further include a light emitting controller forcontrolling the light emitting driver, a sensor controller forcontrolling the sensor driver, and a main controller coupled to thelight emitting controller and the sensor controller.

The sensor controller may be configured to transfer a detection signaltransferred from the sensor driver to the main controller, and the maincontroller may be configured to control the light emitting controlleraccording to the detection signal to display images through the lightemitting driver.

Another exemplary embodiment provides an organic light emitting diode(OLED) display including: a substrate; a gate electrode on thesubstrate; a gate insulating layer on the gate electrode; an oxidesemiconductor layer overlapped with the gate electrode on the gateinsulating layer; an oxide photoelectric conversion layer including asame material as the oxide semiconductor layer and located on the gateinsulating layer; an interlayer insulating layer on the oxidesemiconductor layer and the oxide photoelectric conversion layer; asource electrode and a drain electrode on the interlayer insulatinglayer and being in contact with the oxide semiconductor layer; and apair of sensor electrodes on the interlayer insulating layer and beingin contact with the oxide photoelectric conversion layer.

The oxide semiconductor layer may include oxygen (O) and at least oneelement of gallium (Ga), indium (In), zinc (Zn), hafnium (Hf), and tin(Sn).

The OLED display may further include a gate line, a data line, and alight emitting power line including a same material as and located on asame layer as the gate electrode.

The gate line may extend in a direction that crosses the data line andthe light emitting power line. The gate line or both the data line andthe light emitting power line may have disconnection units at thecrossings between the gate line and the data line and the light emittingpower line. The disconnection units may be coupled to each other througha connection member that includes a same material as the sourceelectrode, the drain electrode, and the pair of sensor electrodes.

The source electrode may contact the data line or the light emittingpower line.

The gate electrode may include a metallic material, and the sourceelectrode, the drain electrode, and the pair of sensor electrodes mayinclude a transparent conductive material.

The interlayer insulating layer may include a planarization layer.

The OLED display may further include an organic emission layer and acommon electrode that are sequentially formed on a portion of the drainelectrode.

Yet another exemplary embodiment provides a method for manufacturingorganic light emitting diode (OLED) display, including: forming firstconductive wires including a gate electrode, a gate line, a data line,and a light emitting power line on a substrate; forming a gateinsulating layer on the first conductive wires; forming an oxidesemiconductor pattern including an oxide semiconductor layer and anoxide photoelectric conversion layer on the gate insulating layer;forming an interlayer insulating layer on the oxide semiconductorpattern; forming a plurality of contact holes by etching the interlayerinsulating layer or etching both the interlayer insulating layer and thegate insulating layer; and forming second conductive wires including asource electrode, a drain electrode, and a pair of sensor electrodesthat contact the oxide semiconductor pattern or the first conductivewires through the plurality of contact holes.

The oxide semiconductor layer may include oxygen (O) and at least oneelement selected from the group consisting of gallium (Ga), indium (In),zinc (Zn), hafnium (Hf), and tin (Sn).

The source electrode may contact any one of the data line or the lightemitting power line.

The gate line may extend in a direction crossing the data line and thelight emitting power line. The gate line or both the data line and thelight emitting power line may have disconnection units at crossingsbetween the gate line and the data line and the light emitting powerline.

The second conductive wires may further include a connection member, andthe connection member may mutually couple to the disconnection units ofthe gate line, the data line, or the light emitting power line.

The method for manufacturing the OLED display may further includeforming an organic light emitting diode by sequentially forming anorganic emission layer and a common electrode on a portion of the drainelectrode.

The first conductive wires may include a metallic material, and thesecond conductive wires may include a transparent conductive material.

According to the exemplary embodiments, the organic light emitting diode(OLED) display may have a relatively simplified structure and improvedperformance while having an information display function and aninformation input function.

In addition, the exemplary embodiments may simplify the method formanufacturing an organic light emitting diode (OLED) display.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing a configuration of an organic lightemitting diode (OLED) display according to an exemplary embodiment;

FIG. 2 is a circuit diagram of a light emitting unit and a sensor unitof a pixel area of FIG. 1;

FIG. 3 is an enlarged cross-sectional view showing a part of a pixelarea of the OLED display of FIG. 1;

FIG. 4 is an enlarged layout view showing a crossing area of a gate lineand a data line at the pixel area of the OLED display of FIG. 1; and

FIGS. 5, 6, 7, and 8 are cross-sectional views sequentially showing aprocess for manufacturing an OLED display according to an exemplaryembodiment.

DETAILED DESCRIPTION

In the following detailed description, certain exemplary embodimentshave been shown and described, simply by way of illustration. As thoseskilled in the art would realize, the described embodiments may bemodified in various different ways, all without departing from thespirit or scope of the present invention.

Accordingly, the drawings and description are to be regarded asillustrative in nature and not restrictive. Like reference numeralsdesignate like elements throughout the specification.

In addition, the size and thickness of each component shown in thedrawings are arbitrarily shown for understanding and ease ofdescription, but the exemplary embodiments are not limited thereto.

In the drawings, the thickness of layers, films, panels, regions, etc.,are exaggerated for clarity. In the drawings, for understanding and easeof description, the thickness of some layers and areas is exaggerated.It will be understood that when an element such as a layer, film,region, or substrate is referred to as being “on” another element, itmay be directly on the other element, or intervening elements may alsobe present.

Hereinafter, an exemplary embodiment will be described with reference toFIGS. 1 to 4.

As shown in FIG. 1, an organic light emitting diode (OLED) display 101includes a plurality of pixel areas (PX) that are formed in a displayarea (DE). A light emitting unit (EP) is formed in each of the pluralityof pixel areas (PX). In addition, a sensor unit (SP) is formed in atleast some pixel areas (PX) among the plurality of pixel areas (PX). Inother words, the light emitting unit (EP) is formed in all the pixelareas (PX), but the sensor unit (SP) may be formed in all the pixelareas (PX) or only in some pixel areas (PX).

In addition, the OLED display 101 further includes light emittingdrivers 911 and 912 that are connected to the light emitting unit (EP),and sensor drivers 921 and 922 that are connected to the sensor unit(SP) and drive the sensor unit (SP). The light emitting drivers includea first light emitting driver 911 that supplies a data signal to thelight emitting unit (EP) and a second light emitting driver 912 thatsupplies a gate signal to the light emitting unit (EP). The sensordrivers include a first sensor driver 921 that receives a detectionsignal from the sensor unit (SP) and a second sensor driver 922 thatsupplies a reset signal to the sensor unit (SP). The OLED display 101further includes a light emitting controller 910 that controls the lightemitting drivers 911 and 912, a sensor controller 920 that controls thesensor drivers 921 and 922, and a main controller 900 that is connectedto the light emitting controller 910 and the sensor controller 920.

The light emitting controller 910 controls the first light emittingdriver 911 and the second light emitting driver 912. The light emittingcontroller 910 includes an analog-to-digital (A-D) conversion circuitthat converts analog image data into digital data, and an imageprocessing circuit that performs image processing such as gammacorrection, etc.

The sensor controller 920 controls the first sensor driver 921 and thesecond sensor driver 922. The sensor controller 920 analyzes thedetection signal that is received from the first sensor driver 921.

The main controller 900 includes a central processing unit (CPU) thatperforms various arithmetic processes, an arithmetic circuit for imageprocessing, a memory circuit, etc.

However, the exemplary embodiment is not limited to the foregoing.Therefore, the configurations and roles of each of the drivers 911, 912,921, and 922 and the controllers 910, 920, and 900 can be variouslymodified in other exemplary embodiments by those skilled in the art.

An information input process and an information output process of theOLED display 101 according to the exemplary embodiment will be describedin more detail. The sensor unit (SP) converts received light into anelectrical signal and transmits it to the sensor drivers 921 and 922.The sensor controller 920 analyzes the detection signal that is receivedby the sensor drivers 921 and 922 to determine a selected position. Themain controller 900 transmits an analog signal to the light emittingcontroller 910 based on information read by the sensor controller 920.The light emitting controller 910 converts the analog signal into adigital signal and transmits it to the light emitting drivers 911 and912, and the light emitting drivers 911 and 912 transmit a video signalto each light emitting unit (EP). The light emitting units (EP) emitlight according to the transmitted video signal to display images.

As shown in FIG. 2, each light emitting unit (EP) includes an organiclight emitting diode 70 and a plurality of thin film transistors (TFTs)10 and 20 for controlling emission, and the sensor unit (SP) includes aphotosensor 60 and a plurality of thin film transistors 30, 40, and 50.

In addition, the OLED display 101 includes a gate line 231, a data line232, a light emitting power line 233, a sensor power line 238, a resetline 236, an output line 237, each of which is connected to at least onecomponent of the light emitting unit (EP) and/or the sensor unit (SP).In one exemplary embodiment, each of the above-mentioned lines 231, 232,233, 236, 237, and 238 is made of the same material on the same layer.

First, the light emitting unit (EP) will be described in more detail.

The light emitting unit (EP) has a 2Tr-1Cap structure that includes theorganic light emitting diode 70, the first thin film transistor 10 foremission, the second thin film transistor 20 for emission, and acapacitor 80 for emission. However, the exemplary embodiment is notlimited thereto. Therefore, the light emitting unit (EP) may includethree or more thin film transistors for emission and two or morecapacitors for emission. In one embodiment, the added thin filmtransistor for emission and capacitor for emission may be a component ofa compensation circuit. The compensation circuit improves uniformity ofthe light emitting unit (EP) that is formed for each pixel (PX), therebysuppressing the occurrence of a deviation in the image quality. In someembodiments, the compensation circuit includes two to eight thin filmtransistors.

The organic light emitting diode 70 includes an anode electrode that isa hole injection electrode, a cathode electrode that is an electroninjection electrode, and an organic emission layer that is disposedbetween the anode and cathode electrodes.

Each of the first thin film transistor 10 and the second thin filmtransistor 20 includes a gate electrode, an oxide semiconductor layer, asource electrode, and a drain electrode.

The first thin film transistor 10 is connected to the gate line 231 andthe data line 232, and the second thin film transistor 20 is connectedto the organic light emitting diode 70 and the light emitting power line233.

The first thin film transistor 10 is used as a switch that selects thelight emitting unit (EP) to be light-emitted. The gate electrode of thefirst thin film transistor 10 is connected to the gate line 231, and thesource electrode of the first thin film transistor 10 is connected tothe data line 232. The first thin film transistor 10 transmits a datavoltage input from the data line 232 to the second thin film transistor20 according to the switching voltage applied to the gate line 231.

The capacitor 80 is connected to the drain electrode of the first thinfilm transistor 10 and the light emitting power line 233, and stores avoltage corresponding to a voltage difference between a voltage that istransferred from the thin film transistor 10 and a voltage that issupplied to the light emitting power line 233.

The second thin film transistor 20 supplies driving power to the organiclight emitting diode 70 to emit light in the selected light emittingunit (EP). The gate electrode of the second thin film transistor 20 isconnected to a terminal of the capacitor 80 that is connected to thedrain electrode of the first thin film transistor 10. The sourceelectrode of the second thin film transistor 20 and the other terminalof the capacitor 80 are connected to the light emitting power line 233.

In addition, a part of the drain electrode of the second thin filmtransistor 20 becomes the anode of the organic light emitting diode 70.

As described above, the second thin film transistor 20 is connected tothe light emitting power line 233 and the capacitor 80, and supplies anoutput current (I_(OLED)), which is proportional to a square of thedifference between a voltage stored in the capacitor 80 and a thresholdvoltage of the second thin film transistor 20, to the organic lightemitting diode 70. The organic light emitting diode 70 light-emitscorresponding to the output current (I_(OLED)) that is supplied from thesecond thin film transistor 20.

Next, the sensor unit (SP) will be described in more detail.

The sensor unit (SP) includes the photosensor 60, the third thin filmtransistor 30, the fourth thin film transistor 40, and a fifth thin filmtransistor 50. However, the exemplary embodiment is not limited thereto.Therefore, the sensor unit (SP) may have two or more thin filmtransistors or four or more thin film transistors.

The photosensor 60 has an oxide photoelectric conversion layer and apair of sensor electrodes. Each of the third thin film transistor 30,the fourth thin film transistor 40, and the fifth thin film transistor50 includes a gate electrode, an oxide semiconductor layer, a sourceelectrode, and a drain electrode. Here, the oxide semiconductor layerand the oxide photoelectric conversion layer are made of the samematerial on the same layer.

The gate electrode of the third thin film transistor 30 is connected tothe reset line 236, the source electrode of the third thin filmtransistor 30 is connected to the sensor power line 238, and the drainelectrode of the third thin film transistor 30 is connected to the gateelectrode of the fourth thin film transistor 40 and the photosensor 60.In addition, the drain electrode of the fourth thin film transistor 40is connected to the sensor power line 238.

The gate electrode of the fifth thin film transistor 50 is connected tothe gate line 231. The source electrode of the fifth thin filmtransistor 50 is connected to the source electrode of the fourth thinfilm transistor 40, and the drain electrode of the fifth thin filmtransistor 50 is connected to the output line 237. Here, the polaritiesof the third thin film transistor 30 and the fourth thin film transistor40 are formed to be different from each other.

First, the third thin film transistor 30 connected to the reset line 236is selected and turned on by the signal of the reset line 236. At thistime, the potential (or voltage) of the sensor power line 238 issupplied to the gate electrode of the fourth thin film transistor 40through the third thin film transistor 30. Therefore, a reverse biasvoltage is applied between the sensor electrodes of the photosensor 60.

At this time, the source electrode of the fourth thin film transistor 40is maintained at a potential that is a difference between the potentialdifference between the source electrode and the gate electrode of thefourth thin film transistor 40 and the potential of the sensor powersupply line 238. At this time, the fifth thin film transistor 50, whichis connected to the gate line 231, is turned off. A period when thethird thin film transistor 30 is turned on by the signal of the resetsignal 236 as described above is referred to as a reset period.

Next, when the potential of the reset line 236 is changed, the thirdthin film transistor 30 connected to the corresponding reset line 236 isturned off, and another reset line is selected to transmit the signal.When the potential of the reset line 236 is changed such that the resetline is in the non-selection state and light is irradiated to thephotosensor 60 corresponding to the corresponding reset line 236,current flows between the sensor electrodes of the photosensor 60. Atthis time, the reverse bias voltage between the sensor electrodes of thephotosensor 60 that is applied during the reset period is lowered.

Next, the fifth thin film transistor 50 is turned on by a signal appliedto the gate line 231. A period when the reset line 236 is not selectedand the fifth thin film transistor 50 is turned on is referred to as anextraction period. As time elapses during the extraction period, thereverse bias voltage between the sensor electrodes of the photosensor 60is small, wherein the variation of the reverse bias voltage isproportional to intensity of light that is irradiated onto the oxidephotoelectric conversion layer of the photosensor 60. At this time, thepotential of any one of the pair of sensor electrodes of the photosensor60 is maintained to be constant. Therefore, the potential of the sensorelectrode, which is connected to the gate electrode of the fourth thinfilm transistor 40 among the sensor electrodes of the photosensor 60, islowered. Therefore, the gate electrode of the fourth thin filmtransistor 40 is deteriorated.

Since the source electrode of the fourth thin film transistor 40 isconnected to a constant current power supply, the fourth thin filmtransistor 40 functions as a source follower. In other words, thevoltage between the gate and source electrodes of the fourth thin filmtransistor 40 is always maintained to be constant. Therefore, as thepotential between the sensor electrodes of the photosensor 60 ischanged, the potential of the gate electrode of the fourth thin filmtransistor 40 is changed, and the potential of the source electrode ischanged accordingly. When the extraction period elapses and the gateline 231 is selected, the change in the potential of the sourceelectrode of the fourth thin film transistor 40 is output to the outputline 237 while the fifth thin film transistor 50 for a sensor is turnedon. As described above, the amount of light received by the photosensor60 of the sensor unit (EP) is detected, such that it can be read as avoltage signal.

As described above, the configuration of the light emitting unit (EP)and the sensor unit (SP) is not limited to the foregoing, and thereforecan be variously modified by those skilled in the art.

In the above-mentioned configuration, the OLED display 101 includes thelight emitting unit (EP) and the sensor unit (SP), making it possible tosimultaneously or concurrently perform the display and input ofinformation. Further, the OLED display 101 has improved performancewhile having a relatively simple structure.

Hereinafter, the stacking structure of the OLED display 101 will bedescribed in detail with reference to FIG. 3. FIG. 3 shows across-sectional view of a structure of the light emitting unit (EP) andthe sensor unit (SP), which are formed in the pixel area (PX) on asubstrate main body 111, including the second thin film transistor 20,the organic light emitting diode 70, the photosensor 60, and the thirdthin film transistor 30.

As shown in FIG. 3, the substrate main body 111 may be formed of aninsulating substrate that is made of glass, quartz, ceramic, plastic,etc. In addition, the substrate main body 111 is transparent to transmitlight. However, the exemplary embodiment is not limited thereto.

A buffer layer 120 is formed on the substrate main body 111. The bufferlayer 120 may be formed of any one of various suitable inorganic layersand organic layers. The buffer layer 120 is provided for planarizing asurface while preventing infiltration of undesirable components such asimpurity elements or moisture. However, the buffer layer 120 may beomitted according to the type and conditions of the substrate main body111.

First conductive wires, which include gate electrodes 132 and 133 of thethin film transistors 20 and 30, respectively, and the light emittingpower line 233, are formed on the buffer layer 120. Although not shownin FIG. 3, the first conductive wires further include the gate line 231,the data line 232, the sensor power line 238, the reset line 236, andthe output line 237.

As described above, the gate electrodes 132 and 133, the gate line 231,the data line 232, the light emitting power line 233, the sensor powerline 238, the reset line 236, and the output line 237 are formed by thesame process, making it possible to simplify the manufacturing processof the OLED display 101.

Here, the gate line 231 is formed in a direction that crosses the dataline 232 and the light emitting power line 233. However, since the gateline 231 is electrically isolated from the data line 232 and the lightemitting power line 233, the gate line 231 or the data line 232 and thelight emitting power line 233 have a disconnection part that is brokenat the crossing area.

For example, as shown in FIG. 4, a part of the data line 232 can bedisconnected, putting the gate line 231 therebetween. Although not shownin FIG. 4, the light emitting power line 233 may have a disconnectedstructure, like the data line 232. However, the exemplary embodiment isnot limited thereto. Therefore, in some embodiments, the gate line 231may have the above described disconnected structure. The disconnectionparts are connected to each other through a connection member 273 thatis formed on other layers. The connection member 273 is made of the samematerial as source electrodes 1711, 1721, and 1731, drain electrodes1712, 1722, and 1732, and a pair of sensor electrodes 1761 and 1762 onthe same layer.

In addition, the reset line 236 or the output line 237 and the sensorpower line 238 may be disconnected at the crossing areas, like the gateline 231 or the data line 232 and light emitting power line 233, and maybe connected through other connection members 277.

Referring back to FIG. 3, the first conductive wires 132, 133, and 233may be made of a metal layer. The metal layer used for the firstconductive wires 132, 133, and 233 may be made of a metal such as Al,Ag, Cr, Ti, Ta, Mo, etc., and an alloy thereof. The first conductivewires 132, 133, and 233 may be formed of a single layer or may be formedof a metal layer including Cr, Mo, Ti, or Ta having excellent physicaland chemical characteristics, or an alloy thereof, and a metal layer ofan Al group or a Ag group having suitable resistance.

A gate insulating layer 140, which may be made of tetraethylorthosilicate (TEOS), silicon nitride (SiNx), silicon oxide (SiO₂),etc., is formed on the first conductive wires 132, 133, and 233.However, the material of the gate insulating layer 140 is not limited tothe foregoing.

An oxide semiconductor pattern, which includes oxide semiconductorlayers 152 and 153 of the thin film transistors 20 and 30, respectively,and an oxide photoelectric conversion layer 156, is formed on the gateinsulating layer 140. In other words, the oxide semiconductor layers 152and 153 and the oxide photoelectric conversion layer 156 are made of thesame material on the same layer.

In addition, the oxide semiconductor layers 152 and 153 are formed to beoverlapped with the gate electrodes 132 and 133, respectively. In otherwords, the respective gate electrodes 132 and 133 of the thin filmtransistors 20 and 30 are respectively disposed below the oxidesemiconductor layers 152 and 153. As described above, when the gateelectrodes 132 and 133 are disposed below the oxide semiconductor layers152 and 153, respectively, the size of the thin film transistors 20 and30 may be formed to be relatively small. Therefore, the overall spaceutilization of the OLED display 101 may be increased. In other words,the integration of the OLED display 101 may be improved.

The oxide semiconductor patterns 152, 153, and 156 may be made of anoxide including at least one element of gallium (Ga), indium (In), zinc(Zn), and tin (Sn), as well as oxygen (O). For example, the oxidesemiconductor patterns 152, 153, and 156 may be an oxide such as InZnO,InGaO, InSnO, ZnSnO, GaSnO, GaZnO, HfInZnO, GaInZnO, etc.

The thin film transistors 20 and 30 using the oxide semiconductor layers152 and 153, respectively, have effective mobility that is 2 to 100times that of a thin film transistor using hydrogenated amorphoussilicon, and an on/off current ratio having a value of 10⁵ to 10⁸. Inother words, the thin film transistors 20 and 30 having the oxidesemiconductor layers 152 and 153, respectively, have relativelyexcellent semiconductor characteristics. In addition, in the abovedescribed oxide semiconductor layers 152 and 153, the band gap is about3.0 to 3.5 eV, such that a light leakage current due to visible lightdoes not occur. Therefore, the OLED display may suppress the occurrenceof an instant afterimage. In addition, in order to improve thecharacteristics of the thin film transistors 20 and 30, group III, groupIV, group V, or transition elements of the periodic table may be addedto the oxide semiconductor layers 152 and 153. Further, in the case ofusing the oxide semiconductor layers 152 and 153, the thin filmtransistors 20 and 30 with relatively high mobility or large currentflow may be manufactured.

In addition, the organic light emitting diode 70, which is connected tothe thin film transistor 20 using the oxide semiconductor layer 152, maysuppress the deviation of luminance as compared to an organic lightemitting diode using polysilicon.

Moreover, the use of the oxide photoelectric conversion layer 156considerably suppresses the deviation of characteristics of thephotosensor as compared to using a photoelectric conversion layer madeof polysilicon, such that a touch position may be detected with highprecision by the photosensor 60.

As described above, the OLED display 101 using the oxide semiconductorlayers 152 and 153 and the oxide photoelectric conversion layer 156 mayhave an information display function and an information input functionwith high reliability.

An interlayer insulating layer 160 is formed on the oxide semiconductorpatterns 152, 153, and 156. The interlayer insulating layer 160 may bemade of various suitable organic materials or inorganic materials thatare known to those skilled in the art. Further, the interlayerinsulating layer 160 may include a planarization layer havingplanarization characteristics, or may be formed as a planarizationlayer.

Further, the interlayer insulating layer 160 is etched, or theinterlayer insulating layer 160 and the gate insulating layer 140 areetched together to form a plurality of contact holes 1605 (shown in FIG.7) that expose the oxide semiconductor layers 152 and 153 and a part ofthe oxide conversion layer 156 or parts of the first conductive wires132, 133, and 233. The contact holes 1605 are illustrated in FIG. 7.

The second conductive wires that include source electrodes 1721 and1731, drain electrodes 1722 and 1732, and a pair of sensor electrodes1761 and 1762, are formed on the interlayer insulating layer 160. Thesecond conductive wires further include the connection members 273 and277 (shown in FIG. 4).

As shown in FIG. 3, the source electrode 1721 of the second thin filmtransistor 20 contacts the light emitting power line 233 through acontact hole. Further, as shown in FIG. 4, the source electrode 1711 ofthe first thin film transistor 10 may contact the data line 232 througha contact hole. In addition, referring back to FIG. 3, a part of thedrain electrode 1722 of the second thin film transistor 20 becomes apixel electrode 710 of the organic light emitting diode 70, which is ananode. In addition, each of the pair of sensor electrodes 1761 and 1762contact the oxide photoelectric conversion layer 156 through the contacthole.

The second conductive wires 1721, 1722, 1731, 1732, 1761, and 1762 maybe made of a transparent conducting material. The transparent conductivematerial may include indium tin oxide (ITO), indium zinc oxide (IZO),zinc oxide (ZnO), indium oxide (In₂O₃), etc.

An organic emission layer 720 and a common electrode 730 aresequentially formed on a part of the drain electrode 1722 of the secondthin film transistor 20, which is the pixel electrode 710. The commonelectrode 730 becomes a cathode of the organic light emitting diode 70.However, the above described exemplary embodiment is not limited to theforegoing. Therefore, the pixel electrode 710 may be a cathode and thecommon electrode 730 may be an anode.

In addition, the OLED display 101 further includes a pixel defininglayer 190. The pixel defining layer 190 has an opening 1905. The opening1905 of the pixel defining layer 1905 exposes a part of the drainelectrode 1722 of the second thin film transistor 20 or the pixelelectrode 710. As described above, the opening 1905 of the pixeldefining layer 190 defines an area where the organic emission layer 720is light-emitted in the light emitting unit (EP). In other words, theorganic emission layer 720 formed within the opening 1905 of the pixeldefining layer 190 emits light to display images. Light generated fromthe organic light emitting diode 70 can display images while the lightis transmitted to the outside through the substrate main body 111.

Further, the OLED display 101 may further include a sealing member 210that is placed on the substrate main body 111 and sealed together toprotect the organic emission layer 720. A space between the sealingmember 210 and the substrate main body 111 may be sealed with a sealant.The sealing member 210 may be formed as an insulating substrate that ismade of glass, quartz, ceramic, plastic, etc., or a metallic substratethat is made of a stainless steel, etc.

In addition, the sealing member 210 may be formed as a sealing thin filmthat is formed of at least one organic layer or inorganic layer or isstacked with at least one inorganic layer and at least one organic layertogether.

With the above-mentioned configuration, the OLED display 101 accordingto the above-described exemplary embodiment may have a relatively simplestructure while having the information display function and theinformation input function. Further, the OLED display 101 including thethin film transistors 10, 20, 30, 40, and 50 and the photosensor 60 mayhave improved performance and relatively excellent characteristics.

In FIG. 3, reference numeral FG indicates a user's finger. An arrowshown by a dotted line indicates a path through which the photosensor 60detects the position of the finger FG.

Hereinafter, with regard to FIGS. 5 to 8, a method for manufacturing theOLED display 101 according to one exemplary embodiment will bedescribed.

First, as shown in FIG. 5, the buffer layer 120 is formed on thesubstrate main body 101. The first conductive wires 132, 133, and 233are formed on the buffer layer 120. The first conductive wires includethe gate electrodes 132 and 133 and the light emitting power line 233.In addition, although not shown in FIG. 5, the first conductive wiresmay further include the gate line 231, the data line 232, the reset line236, the output line 237, the sensor power line 238, etc. In FIG. 5, thefirst conductive wires 132, 133, and 233 are formed of the same metallayer.

Next, as shown in FIG. 6, the gate insulating layer 140, which coversthe first conductive wires 132, 133, and 233, is formed. The oxidesemiconductor pattern, which includes the oxide semiconductor layers 152and 153 and the oxide photoelectric conversion layer 156, is formed onthe gate insulating layer 140.

In one embodiment, the oxide semiconductor patterns 152, 153, and 156are made of an oxide including at least one element of gallium (Ga),indium (In), zinc (Zn), and tin (Sn), as well as oxygen (O).

Next, as shown in FIG. 7, the interlayer insulating layer 160, whichcovers the oxide semiconductor patterns 152, 153, and 156, is formed.The interlayer insulating layer 160 is etched or the interlayerinsulating layer 160 and the gate insulating layer 140 are etchedtogether to form a plurality of contact holes 1605 that expose the oxidesemiconductor layers 152 and 153 and a part of the oxide conversionlayer 156 or a part of the first conductive wires 132, 133, and 233.

Next, as shown in FIG. 8, the second conductive wires, which include thesource electrodes 1721 and 1731, the drain electrodes 1722 and 1732, andthe pair of sensor electrodes 1761 and 1762, are formed on theinterlayer insulating layer 160. Although not shown in FIG. 8, thesecond conductive wires may further include the connection members 273and 277 (shown in FIG. 4). Moreover, a part of the drain electrode 1722of the second thin film transistor 20 becomes the pixel electrode 710 ofthe organic light emitting diode 70.

Next, as shown in FIG. 3, the pixel defining layer 190, the organicemission layer 720, and the common electrode 730 are formed. The OLEDdisplay 101 according to one exemplary embodiment is formed by placingthe sealing member 210 on the substrate main body 111, which are sealedtogether.

The above-mentioned manufacturing method may relatively simplify themanufacturing of the OLED display 101 according to the above describedexemplary embodiment.

While this disclosure has been described in connection with what ispresently considered to be practical exemplary embodiments, it is to beunderstood that the present invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the appended claims and their equivalents.

What is claimed is:
 1. A method for manufacturing organic light emittingdiode display, comprising: forming first conductive wires comprising agate electrode, a gate line, a data line, and a light emitting powerline on a substrate; forming a gate insulating layer on each of thefirst conductive wires; forming an oxide semiconductor patterncomprising an oxide semiconductor layer and an oxide photoelectricconversion layer on the gate insulating layer; forming an interlayerinsulating layer on the oxide semiconductor pattern; forming a pluralityof contact holes by etching the interlayer insulating layer or etchingboth the interlayer insulating layer and the gate insulating layer; andforming second conductive wires comprising a source electrode, a drainelectrode, and a pair of sensor electrodes that contact the oxidesemiconductor pattern or the first conductive wires through theplurality of contact holes.
 2. The method for manufacturing organiclight emitting diode display of claim 1, wherein the oxide semiconductorlayer comprises oxygen (O) and at least one element selected from thegroup consisting of gallium (Ga), indium (In), zinc (Zn), hafnium (Hf),and tin (Sn).
 3. The method for manufacturing organic light emittingdiode display of claim 1, wherein the source electrode contacts any oneof the data line or the light emitting power line.
 4. The method formanufacturing organic light emitting diode display of claim 1, whereinthe gate line extends in a direction crossing the data line and thelight emitting power line, and the gate line or both the data line andthe light emitting power line have disconnection unit at crossingsbetween the gate line and the data line and the light emitting powerline.
 5. The method for manufacturing organic light emitting diodedisplay of claim 4, wherein the second conductive wires further comprisea connection member, and the connection member mutually couples to thedisconnection units of the gate line, the data line, or the lightemitting power line.
 6. The method for manufacturing organic lightemitting diode display of claim 1, further comprising: forming anorganic light emitting diode by sequentially forming an organic emissionlayer and a common electrode on a portion of the drain electrode.
 7. Themethod for manufacturing organic light emitting diode display of claim6, wherein the first conductive wires comprise a metallic material, andthe second conductive wires comprise a transparent conductive material.